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B1S07 4746AP H5N2901 TA114 SMCJ51CA 150515 T110026 LTC3411
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  Datasheet File OCR Text:
  NTE2651 silicon npn transistor horizontal deflection output for ultrahigh?definition crt display features:  high speed  high breakdown voltage  high reliability absolute maximum ratings: (t a + 25 c unless otherwise specified) collector?base voltage, v cbo 1500v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?emitter voltage, v ceo 800v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v ebo 6v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c continuous 10a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed 25a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector dissipation, p c t a + 25 c 3w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c + 25 c 70w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . electrical characteristics: (t a + 25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb = 800v, i e = 0 ? ? 10 a i ces v ce = 1500v, r be = 0 ? ? 1.0 ma emitter cutoff current i ebo v eb = 4v, i c = 0 ? ? 1.0 ma collector?emitter sustaining voltage v ceo(sus) i c = 100ma, i b = 0 800 ? ? v collector?emitter saturation voltage v ce(sat) i c = 8a, i b = 2a ? ? 5.0 v base?emitter saturation voltage v be(sat) i c = 8a, i b = 2a ? ? 1.5 v dc current gain h fe v ce = 5v, i c = 1a 20 ? 30 v ce = 5v, i c = 8a 4 ? 7 storage time t stg i c = 6a, i b1 = 1.2a, i b2 = 2.4a ? ? 3.0 s fall time t f i c = 6a, i b1 = 1.2a, i b2 = 2.4a ? 1.0 0.2 s
.630 (16.0) .158 (4.0) .315 (8.0) .866 (22.0) .804 (20.4) bce .134 (3.4) dia .221 (5.6) .123 (3.1) .215 (5.45) .040 (1.0)


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